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Si4388DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
Gate Threshold Voltage
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS(th)
V GS = 0 V, I D = 250 μA
V GS = 0 V, I D = 1 mA
I D = 250 μA
I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = V GS , I D = 1 mA
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
30
30
1
0.6
27
-6
3
1.6
V
Gate-Body Leakage
I GSS
V DS = 0 V, V GS = ± 20 V
V DS = 0 V, V GS = ± 12 V
Ch-1
Ch-2
100
100
μA
V DS = 30 V, V GS = 0 V
Ch-1
0.001
Zero Gate Voltage Drain Current
I DSS
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 100 °C
Ch-2
Ch-1
0.22
1
0.025
mA
V DS = 30 V, V GS = 0 V, T J = 100 °C
Ch-2
12
100
On-State Drain Current b
I D(on)
V DS = 5 V, V GS = 10 V
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 8 A
Ch-1
Ch-2
Ch-1
20
20
0.013
0.016
A
Drain-Source On-State Resistance b
R DS(on)
V GS = 10 V, I D = 8 A
V GS = 4.5 V, I D = 5 A
Ch-2
Ch-1
0.0125
0.017
0.015
0.024
Ω
V GS = 5 V, I D = 5 A
Ch-2
0.014
0.017
Forward Transconductance b
g fs
V DS = 15 V, I D = 8 A
V DS = 15 V, I D = 8 A
Ch-1
Ch-2
20
38
S
Dynamic a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C iss
C oss
C rss
Q g
Channel-1
V DS = 15 V, V GS = 0 V, f = 1 MHz
Channel-2
V DS = 15 V, V GS = 0 V, f = 1 MHz
V DS = 15 V, V GS = 10 V, I D = 5 A
V DS = 15 V, V GS = 10 V, I D = 5 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
946
2230
173
350
84
133
18
41
8
27
62
12
pF
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q gs
Q gd
R g
Channel-1
V DS = 15 V, V GS = 4.5 V, I D = 5 A
Channel-2
V DS = 15 V, V GS = 4.5 V, I D = 5 A
f = 1 MHz
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
19
2.55
3.5
2.45
3.7
2.8
1.8
29
4.2
2.7
nC
Ω
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Document Number: 74344
S09-0392-Rev. B, 09-Mar-09
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